منابع مشابه
Detection of Polymer Brushes developed via Single Crystal Growth
Single crystals consisting various surface morphologies and epitaxial structures were applied to investigate the effect of other phase regions in the vicinity of a given tethered chains-covered area having a certain molecular weight of amorphous brushes. The designed experiments demonstrated that regardless of the type of surface morphology (patterned and especial mixed-brushes, homo and co...
متن کاملEFFECT OF SPIRAL DESIGN ON CRYSTAL ORIENTATION DURING SINGLE CRYSTAL GROWTH
Geometrical design of the spiral crystal selector can affect crystal orientation in the final single crystal structure. To achieve a better understanding of conditions associated with the onset of crystal orientation in a spiral crystal selector, temperature field was investigated using three-dimensional finite element method during the process. Different geometries of spiral crystal selec...
متن کاملSingle crystal growth of LaCuOS by the flux method
Preparation of single crystals of LaCuOS, that is a transparent p-type semiconductor exhibiting violet-light emission, was demonstrated by flux method using NaCl+KCl(1:1) as flux. The crystals were grown in an alumina tube inserted in an evacuated silica glass tube using the starting materials of La2O2S and Cu2S, as well as the flux and a small amount of K2S that reduces the coloration of cryst...
متن کاملINVESTIGATION ON GROWTH AND CHARACTERIZATION OF NONLINEAR OPTICAL DICHLORO-DIGLYCINE ZINC II SINGLE CRYSTAL
The study of amino acid based nonlinear optical (NLO) materials with optimum physical properties is an important area due to their practical applications such as optical communication, optical computing, optical information processing, optical disk data storage, laser fusion reactions, laser remote sensing, colour display, medical diagnostics, etc. Also, microelectronic industries require cryst...
متن کاملSiC Bulk Single Crystal Growth
SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 1981
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.9.288